SUD50N04-07 features ?trenchfet ? power mosfets ? 175 c junction temperature ? low threshold applications ? motor control ? automotive - 12 v boardnet product summary v (br)dss (v) r ds(on) ( )i d (a) 40 0.0074 at v gs = 10 v 65 0.011 at v gs = 4.5 v 54 notes: a. duty cycle 1 %. b. surface mounted on 1" fr4 board. c. based on maximum allowable junction temp erature. package limitation current is 50 a. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 40 v gate-source voltage v gs 20 continuous drain current (t j = 175 c) t c = 25 c i d 65 c a t c = 100 c 46 c pulsed drain current i dm 100 avalanche current i ar 40 repetitive avalanche energy a l = 0.1 mh e ar 80 mj power dissipation a t c = 25 c p d 65 w operating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol typical maximum unit junction-to-ambient b t 10 sec r thja 18 22 c/w steady state 40 50 junction-to-case r thjc 1.9 2.3 d g s to-252 s gd top view drain connected to tab n-channel mosfet ordering information: s ud50n04-07-e3 (lead (pb)-free) rohs compliant n-channel 40 v (d-s) 175 c mosfet www.freescale.net.cn 1 / 6 vishay siliconix SUD50N04-07 new product document number: 73790 s-60363?rev. a, 13-mar-06 www.vishay.com 1 n-channel 40-v (d-s), 175 c mosfet features ?trenchfet ? power mosfets ? 175 c junction temperature ? low threshold applications ? motor control ? automotive - 12 v boardnet product summary v (br)dss (v) r ds(on) ( : )i d (a) 40 0.0074 at v gs = 10 v 65 0.011 at v gs = 4.5 v 54 notes: a. duty cycle d 1 %. b. surface mounted on 1" fr4 board. c. based on maximum allowable junction temp erature. package limitation current is 50 a. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 40 v gate-source voltage v gs 20 continuous drain current (t j = 175 c) t c = 25 c i d 65 c a t c = 100 c 46 c pulsed drain current i dm 100 avalanche current i ar 40 repetitive avalanche energy a l = 0.1 mh e ar 80 mj power dissipation a t c = 25 c p d 65 w operating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol typical maximum unit junction-to-ambient b t d 10 sec r thja 18 22 c/w steady state 40 50 junction-to-case r thjc 1.9 2.3 d g s to-252 s gd top view drain connected to tab n-channel mosfet ordering information: s ud50n04-07-e3 (lead (pb)-free) rohs compliant
notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 40 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1 3 gate body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 32 v, v gs = 0 v 1 a v ds = 32 v, v gs = 0 v, t j = 125 c 50 v ds = 32 v, v gs = 0 v, t j = 175 c 150 on-state drain current a i d(on) v ds = 5 v, v gs = 10 v 65 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 20 a 0.006 0.0074 v gs = 10 v, i d = 20 a, t j = 125 c 0.012 v gs = 10 v, i d = 20 a, t j = 175 c 0.015 v gs = 4.5 v, i d = 10 a 0.0085 0.011 forward transconductance a g fs v ds = 15 v, i d = 15 a 20 57 s dynamic b input capacitance c iss v gs = 0 v, v ds = 25 v, f = 1 mhz 2800 pf output capacitance c oss 320 reverse transfer capacitance c rss 190 total gate charge c q g v ds = 20 v, v gs = 10 v, i d = 50 a 50 75 nc gate-source charge c q gs 10 gate-drain charge c q gd 10 gate resistance r g 2.0 tu r n - o n d e l ay t i m e c t d(on) v dd = 20 v, r l = 0.4 i d ? 50 a, v gen = 10 v, r g = 2.5 11 20 ns rise time c t r 20 30 turn-off delaytime c t d(off) 40 60 fall time c t f 15 25 source-drain diode ratings and characteristics (t c = 25 c) b continous current i s 43 a pulsed current i sm 100 forward voltage a v sd i f = 30 a, v gs = 0 v 0.90 1.50 v reverse recovery time t rr i f = 30 a, di/dt = 100 a/s 30 45 ns www.freescale.net.cn 2 / 6 SUD50N04-07 n-channel 40 v (d-s) 175 c mosfet www.vishay.com 2 document number: 73790 s-60363?rev. a, 13-mar-06 vishay siliconix SUD50N04-07 new product notes: a. pulse test; pulse width d 300 s, duty cycle d 2 %. b. guaranteed by design, not s ubject to production testing. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 40 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1 3 gate body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 32 v, v gs = 0 v 1 a v ds = 32 v, v gs = 0 v, t j = 125 c 50 v ds = 32 v, v gs = 0 v, t j = 175 c 150 on-state drain current a i d(on) v ds = 5 v, v gs = 10 v 65 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 20 a 0.006 0.0074 : v gs = 10 v, i d = 20 a, t j = 125 c 0.012 v gs = 10 v, i d = 20 a, t j = 175 c 0.015 v gs = 4.5 v, i d = 10 a 0.0085 0.011 forward transconductance a g fs v ds = 15 v, i d = 15 a 20 57 s dynamic b input capacitance c iss v gs = 0 v, v ds = 25 v, f = 1 mhz 2800 pf output capacitance c oss 320 reverse transfer capacitance c rss 190 total gate charge c q g v ds = 20 v, v gs = 10 v, i d = 50 a 50 75 nc gate-source charge c q gs 10 gate-drain charge c q gd 10 gate resistance r g 2.0 : tu r n - o n d e l ay t i m e c t d(on) v dd = 20 v, r l = 0.4 : i d # 50 a, v gen = 10 v, r g = 2.5 : 11 20 ns rise time c t r 20 30 turn-off delaytime c t d(off) 40 60 fall time c t f 15 25 source-drain diode ratings and characteristics (t c = 25 c) b continous current i s 43 a pulsed current i sm 100 forward voltage a v sd i f = 30 a, v gs = 0 v 0.90 1.50 v reverse recovery time t rr i f = 30 a, di/dt = 100 a/s 30 45 ns
typical characteristics t a = 25 c, unless noted output characteristics transconductance capacitance 0 20 40 60 80 100 0246810 v ds - drain-to-source voltage (v) ) a ( t n e r r u c n i a r d - i d 3 v v gs = 10 thru 5 v 4 v 0 30 60 90 120 150 0 102030405060 v gs - gate-to-source voltage (v) ) s ( e c n a t c u d n o c s n a r t - g s f t c = - 55 c 25 c 125 c 0 800 1600 2400 3200 4000 0 8 16 24 32 40 v ds - drain-to-source voltage (v) ) f p ( e c n a t i c a p a c - c c iss c oss c rss transfer characteristics on-resistance vs. drain current gate charge 0 20 40 60 80 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v gs - gate-to-source voltage (v) ) a ( t n e r r u c n i a r d - i d 25 c - 55 c t c = 125 c 0.000 0.004 0.008 0.012 0.016 0 20406080100 ( ) e c n a t s i s e r - n o - i d - drain current (a) r ) n o ( s d v gs = 10 v v gs = 4.5 v 0 2 4 6 8 10 0 1020304050 e g a t l o v e c r u o s - o t - e t a g - ) v ( q g - total gate charge (nc) v s g v ds = 20 v i d = 50 a www.freescale.net.cn 3 / 6 SUD50N04-07 n-channel 40 v (d-s) 175 c mosfet document number: 73790 s-60363?rev. a, 13-mar-06 www.vishay.com 3 vishay siliconix SUD50N04-07 new product typical characteristics t a = 25 c, unless noted output characteristics transconductance capacitance 0 20 40 60 80 100 0246810 v ds - drain-to-source voltage (v) ) a ( t n e r r u c n i a r d - i d 3 v v gs = 10 thru 5 v 4 v 0 30 60 90 120 150 0 102030405060 v gs - gate-to-source voltage (v) ) s ( e c n a t c u d n o c s n a r t - g s f t c = - 55 c 25 c 125 c 0 800 1600 2400 3200 4000 0 8 16 24 32 40 v ds - drain-to-source voltage (v) ) f p ( e c n a t i c a p a c - c c iss c oss c rss transfer characteristics on-resistance vs. drain current gate charge 0 20 40 60 80 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v gs - gate-to-source voltage (v) ) a ( t n e r r u c n i a r d - i d 25 c - 55 c t c = 125 c 0.000 0.004 0.008 0.012 0.016 0 20406080100 ( ) e c n a t s i s e r - n o - i d - drain current (a) r ) n o ( s d v gs = 10 v v gs = 4.5 v 0 2 4 6 8 10 0 1020304050 e g a t l o v e c r u o s - o t - e t a g - ) v ( q g - total gate charge (nc) v s g v ds = 20 v i d = 50 a
typical characteristics t a = 25 c, unless noted thermal ratings on-resistance vs. junction temperature ) d e z i l a m r o n ( e c n a t s i s e r - n o - r ) n o ( s d 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 175 t j - junction temperature (c) v gs = 10 v i d = 20 a source-drain diode forward voltage v sd - source-to-drain voltage (v) ) a ( t n e r r u c e c r u o s - i s 100 10 1 0.3 0.6 0.9 1.2 1.5 t j = 25 c t j = 150 c maximum avalanche and drain current vs. case temperature 0 10 20 30 40 50 60 70 80 0 25 50 75 100 125 150 175 t c - case temperature (c) ) a ( t n e r r u c n i a r d - i d limited by package safe operating area t c = 25 c single pulse v ds - drain-to-source voltage (v) ) a ( t n e r r u c n i a r d - i d 200 10 0.1 1 10 50 0.1 100 1 ms 10 ms 100 ms dc 10 s 100 s 1 limited by r ds(on) normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 10 e v i t c e f f e d e z i l a m r o n t n e i s n a r t e c n a d e p m i l a m r e h t 1 k 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 100 1 www.freescale.net.cn 4 / 6 SUD50N04-07 n-channel 40 v (d-s) 175 c mosfet www.vishay.com 4 document number: 73790 s-60363?rev. a, 13-mar-06 vishay siliconix SUD50N04-07 new product typical characteristics t a = 25 c, unless noted thermal ratings on-resistance vs. junction temperature ) d e z i l a m r o n ( e c n a t s i s e r - n o - r ) n o ( s d 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 175 t j - junction temperature (c) v gs = 10 v i d = 20 a source-drain diode forward voltage v sd - source-to-drain voltage (v) ) a ( t n e r r u c e c r u o s - i s 100 10 1 0.3 0.6 0.9 1.2 1.5 t j = 25 c t j = 150 c maximum avalanche and drain current vs. case temperature 0 10 20 30 40 50 60 70 80 0 25 50 75 100 125 150 175 t c - case temperature (c) ) a ( t n e r r u c n i a r d - i d limited by package safe operating area t c = 25 c single pulse v ds - drain-to-source voltage (v) ) a ( t n e r r u c n i a r d - i d 200 10 0.1 1 10 50 0.1 100 1 ms 10 ms 100 ms dc 10 s 100 s 1 limited by r ds(on) normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 10 e v i t c e f f e d e z i l a m r o n t n e i s n a r t e c n a d e p m i l a m r e h t 1 k 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 100 1
thermal ratings normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 10 e v i t c e f f e d e z i l a m r o nt n e i s n a r t e c n a d e p m i l a m r e h t 1 00 0.2 0.1 duty cycle = 0.5 1 0.05 0.02 single pulse www.freescale.net.cn 5 / 6 SUD50N04-07 n-channel 40 v (d-s) 175 c mosfet document number: 73790 s-60363?rev. a, 13-mar-06 www.vishay.com 5 vishay siliconix SUD50N04-07 new product thermal ratings vishay siliconix maintains worldwide manufac turing capability. products ma y be manufactured at one of several qualified locatio ns. reliability data for silicon tech- nology and package reliability represent a composite of all qua lified locations. for related documents such as package/tape dra wings, part marking, and reliability data, see http://www.vishay.com/ppg?73790. normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 10 e v i t c e f f e d e z i l a m r o nt n e i s n a r t e c n a d e p m i l a m r e h t 1 00 0.2 0.1 duty cycle = 0.5 1 0.05 0.02 single pulse
document number: 91000 www.vishay.com revision: 18-jul-08 1 www.freescale.net.cn 6 / 6 disclaimer material category policy all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. freestyle intertechnology, inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, ?freestyle?), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on freestyle?s knowledge of typical requirements that are often placed on freestyle products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customer?s responsib ility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customer?s technical experts. product specifications do not expand or otherwise modify freestyle?s terms and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, freestyle products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the freestyle product could result in personal injury or death. customers using or selling freestyle products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold freestyle and its distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay freestyle intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the european parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some freestyle documentation may still make reference to rohs directive 2002/95/ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. SUD50N04-07 n-channel 40 v (d-s) 175 c mosfet
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